3.1 - 71 3.1 100v thru 500v, up to 14 amp, n-channel mosfet with or without zener gate clamp protection 4 11 r4 supersedes 1 07 r3 power mosfet in hermetic isolated jedec to-257aa package features ? isolated hermetic metal package ? bi-lateral zener gate protection (optional) ? fast switching, low drive current ? ease of paralleling for added power ? low r ds(on) ? available screened to mil-s-19500, tx, txv and s levels description this series of hermetically packaged products feature the latest advanced mosfet and packaging technology. they are ideally suited for military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. the mosfet gates are protected using bi-lateral zener clamps in the om6101st series. maximum ratings OM6103ST om6104st om6101st om6102st om6003st om6004st om6001st om6002st part number v ds r ds(on) i d om6001st/om6101st 100 v .20 14 a om6002st/om6102st 200 v .44 9 a om6003st/OM6103ST 400 v 1.05 5.5 a om6004st/om6104st 500 v 1.60 4.5 a note: om6101st thru om6104st is supplied with zener gate protection. om6001st thru om6004st is supplied without zener gate protection. schematic without zener clamps with zener clamps om6001st - 6004st om6101st - 6104st 2 - source 3 - gate zeners 1 - drain 3 - gate 1 - drain 2 - source
3.1 - 72 om6001st - om6104st 3.1 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6101st / om6001st (100v) static p/n om6102st / om6002 st (200v) parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, bv dss drain-source breakdown 200 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gss gate-body leakage (om6101) 500 na v gs = 12.8 v i gss gate-body leakage (om6102) 500 na v gs = 12.8 v i gss gate-body leakage (om6001) 100 na v gs = 20 v i gss gate-body leakage (om6002) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 14 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 9.0 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 1.2 1.60 v v gs = 10 v, i d = 8 a v ds(on) static drain-source on-state 1.25 2.2 v v gs = 10 v, i d = 5.0 a voltage 1 voltage 1 r ds(on) static drain-source on-state 0.20 v gs = 10 v, i d = 8 a r ds(on) static drain-source on-state 0.44 v gs = 10 v, i d = 5.0 a resistance 1 resistance 1 r ds(on) static drain-source on-state 0.40 v gs = 10 v, i d = 8 a, r ds(on) static drain-source on-state 0.88 v gs = 10 v, i d = 5.0 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 4.0 s ( w ) v ds 2 v ds(on) , i d = 8 a g fs forward transductance 1 3.0 5.8 s ( w ) v ds 2 v ds(on) , i d = 5.0 a c iss input capacitance 750 pf v gs = 0 c iss input capacitance 780 pf v gs = 0 c oss output capacitance 250 pf v ds = 25 v c oss output capacitance 150 pf v ds = 25 v c rss reverse transfer capacitance 100 pf f = 1 mhz c rss reverse transfer capacitance 55 pf f = 1 mhz t d(on) turn-on delay time 15 ns v dd = 30 v, i d @ 8 a t d(on) turn-on delay time 9 ns v dd = 75v, i d @ 5.0 a t r rise time 35 ns r g = 7.5 w , v ds = 10 v t r rise time 18 ns r g = 7.5 w , v gs =10 v t d(off) turn-off delay time 38 ns t d(off) turn-off delay time 45 ns t f fall time 23 ns t f fall time 27 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 14 a modified mospower i s continuous source current - 9 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 56 a the integral p-n i sm source current 1 - 36 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -14 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -9 a, v gs = 0 v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -12 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -8 a, v gs = 0 t rr reverse recovery time 100 ns t j = 150 c, i f = i s ,t rr reverse recovery time 250 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. g d s g d s ( w ) ( w )
3.1 - 73 om6001st - om6104st 3.1 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n OM6103ST / om6003st (400v) static p/n om6104st / om6004st (500v) parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 400 v v gs = 0, bv dss drain-source breakdown 500 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gss gate-body leakage (om6103) 500 na v gs = 12.8 v i gss gate-body leakage (om6104) 500 na v gs = 12.8 v i gss gate-body leakage (om6003) 100 na v gs = 20 v i gss gate-body leakage (om6004) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 5.5 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 4.5 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 2.4 3.15 v v gs = 10 v, i d = 3.0 a v ds(on) static drain-source on-state 3.25 4.00 v v gs = 10 v, i d = 2.5 a voltage 1 voltage 1 r ds(on) static drain-source on-state 1.05 v gs = 10 v, i d = 3.0 a r ds(on) static drain-source on-state 1.6 v gs = 10 v, i d = 2.5 a resistance 1 resistance 1 r ds(on) static drain-source on-state 2.0 v gs = 10 v, i d = 3.0 a, r ds(on) static drain-source on-state 2.9 3.3 v gs = 10 v, i d = 2.5 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 3.0 3.6 s ( w ) v ds 2 v ds(on) , i d = 3.0 a g fs forward transductance 1 2.5 2.8 s ( w ) v ds 2 v ds(on) , i d = 2.5 a c iss input capacitance 700 pf v gs = 0 c iss input capacitance 700 pf v gs = 0 c oss output capacitance 70 pf v ds = 25 v c oss output capacitance 90 pf v ds = 25 v c rss reverse transfer capacitance 20 pf f = 1 mhz c rss reverse transfer capacitance 30 pf f = 1 mhz t d(on) turn-on delay time 18 ns v dd = 175 v, i d @ 3.0 a t d(on) turn-on delay time 18 ns v dd = 225 v, i d @ 2.5 a t r rise time 20 ns r g = 10 w ,v gs = 10 v t r rise time 20 ns r g = 7.5 w , v gs = 10 v t d(off) turn-off delay time 40 ns t d(off) turn-off delay time 42 ns t f fall time 25 ns t f fall time 25 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 5.5 a modified mospower i s continuous source current - 4.5 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 22 a the integral p-n i sm source current 1 - 18 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 1.6 v t c = 25 c, i s = -5.5 a, v gs = 0 v sd diode forward voltage 1 - 1.4 v t c = 25 c, i s = -4.5 a, v gs = 0 v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -4.5 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -4 a, v gs = 0 t rr reverse recovery time 470 ns t j = 150 c, i f = i s ,t rr reverse recovery time 430 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. g d s g d s ( w ) ( w )
om6001st - om6104st 3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 absolute maximum ratings (t c = 25c unless otherwise noted) parameter om6001st om6002st om6003st om6004st units om6101st om6102st OM6103ST om6104st v ds drain-source voltage 100 200 400 500 v v dgr drain-gate voltage (r gs = 1 m ) 100 200 400 500 v i d @ t c = 25c continuous drain current 2 14 9 5.5 4.5 a i d @ t c = 100c continuous drain current 2 9 6 3.5 3 a i dm pulsed drain current 1 56 36 22 18 a p d @ t c = 25c maximum power dissipation 50 50 50 50 w p d @ t c = 100c maximum power dissipation 20 20 20 20 w junction to case linear derating factor 0.4 0.4 0.4 0.4 w/c junction to ambient linear derating factor .015 .015 .015 .015 w/c t j operating and t stg storage temperature range -55 to 150 -55 to 150 -55 to 150 -55 to 150 c lead temperature (1/16" from case for 10 secs.) 300 300 300 300 c 1 pulse test: pulse width 300 sec. duty cycle 2%. 2 package pin limitations = 16 amps thermal resistance (maximum) at t a = 25c r thjc junction-to-case 2.5 c/w r thja junction-to-ambient 65 c/w free air operation 90 75 60 45 30 15 0 0 25 50 75 100 125 150 175 t c - case temperature (c? p d - power dissipation (watts) r q jc = 2.5?c/w .430 .410 .200 .190 .038 max. .005 .120 typ. .537 .527 .665 .645 .420 .410 .150 .140 .750 .500 .100 typ. .035 .025 .045 .035 power derating mechanical outline with pin connection 123 pin 1: drain pin 2: source pin 3: gate note: mosfets are also available in z-tab, dual and quad pak styles. duals and quads available in non-gate versions only. please call the factory for more information. package options mod pak z-tab 6 pin sip
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